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STMicroelectronics STU6N95K5

STU6N95K5 MOSFET, 950 V N-Channel, 1.25 Ohm, TO-251

MPNSTU6N95K5
End of Life

STMicroelectronics SuperMESH5™ N-channel MOSFET, STU6N95K5, 950 V Vdss, 9 A continuous drain, 1.25 Ohm Rds(on) at 10 V, 13 nC gate charge, TO-251 (IPAK) through-hole package, -55 to 150 °C junction temperature.

$2.97Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STU6N95K5 Technical Specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.25Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Product details

950 V N-channel in a TO-251 — what it is for

It comes in a through-hole TO-251 (IPAK) package with short leads, meant for high-voltage switching in flyback converters, PFC stages, and auxiliary power supplies where board space is tight but a through-hole device is preferred for mechanical strength or thermal transfer into a heatsink.

1.25 Ohm on-resistance — conduction loss at the operating point

Maximum Rds(on) is 1.25 Ohm at 3 A drain current with 10 V gate drive. At the full 9 A rating the actual on-resistance will be higher due to self-heating — the datasheet's normalised curve shows Rds(on) roughly doubling at 150 °C junction. For a 100 W flyback running at 0.5 A average drain current, that 1.25 Ohm contributes under 0.3 W conduction loss; the same part in a 3 A continuous load would dissipate over 11 W, pushing the 90 W package limit.

13 nC gate charge — drive it with a small driver

Total gate charge at 10 V is 13 nC, which keeps switching losses low and lets a simple gate-drive transformer or a low-current driver IC handle the transitions. Input capacitance is 450 pF at 100 V drain bias — the Miller plateau is short, so the part can switch several hundred volts in under 50 ns with a proper layout. That matters for reducing turn-on crossover loss in hard-switched topologies.

-55 to 150 °C — field-replaceable in harsh spots

The TO-251 package has a tab that can be bolted to a chassis or heatsink — on a site repair, swapping this part is a soldering-iron job, no hot-air station needed. The gate threshold is 5 V max at 100 µA, which means a standard 12 V gate drive from a PWM controller will saturate it fully.

Frequently asked questions

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