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STMicroelectronics STU2LN60K3 — Discrete Semiconductors

STU2LN60K3 N-Channel MOSFET, 600 V, 2 A, IPAK

MPNSTU2LN60K3
Active

STMicroelectronics SuperMESH3™ N-channel MOSFET, 600 V, 2 A, IPAK (TO-251), 4.5 Ohm Rds(on) @ 1 A, 10 V, 12 nC gate charge, ±30 Vgs, 45 W, -55 to 150 °C junction.

STMicroelectronics STU2LN60K3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STU2LN60K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Operating temperature high150°C(TJ)
Vgs±30 V
Power45.0
Package_typeTube
Capacitance_uf0.0002
StatusActive
Supply voltage600.0
Vgs(Th) (Max) @ id4.5 V @ 50µA
Switching current2.0
Rds on (Max) @ id, vgs4.5Ohm @ 1 A, 10 V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V

Product details

600 V, 2 A, 4.5 Ohm — where this MOSFET fits

The STU2LN60K3 is an N-channel 600 V, 2 A power MOSFET from ST's SuperMESH3™ series, housed in a through-hole IPAK (TO-251) package.

±30 V Vgs — gate drive margin

The ±30 V gate-source rating is double the usual ±20 V limit on many 600 V MOSFETs. That extra headroom matters when gate ringing from a hard-switched primary-side controller pushes the drive voltage above the absolute maximum — a common failure mode in compact flyback layouts where the gate-drive loop inductance is hard to minimise.

Active lifecycle — no end-of-life clock

ST lists the STU2LN60K3 as Active.

Frequently asked questions

What is the closest pin-compatible alternative to STU2LN60K3?

No official cross-reference or second-source alternate is listed for the STU2LN60K3. The same-family part STU2LN60 shares the basic die design; confirm the package and Rds(on) grade against your BOM before substituting.

What does the ±30 V Vgs rating mean for the design?

The ±30 V gate-source maximum gives extra margin against gate-drive overshoot in hard-switched topologies, reducing the risk of oxide breakdown from ringing. Most 600 V MOSFETs are rated ±20 V; this part tolerates a wider transient.