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STMicroelectronics STU16N65M2

ST STU16N65M2 N-Channel MOSFET, 650V 11A TO-251

MPNSTU16N65M2
End of Life

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, Through Hole, TO-251-3 Short Leads, IPak, TO-251AA, -55°C ~ 150°C (TJ), Tube.

$2.33Ref. price · indicative, final on quote
STMicroelectronics STU16N65M2 datasheet (PDF)
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesMDmesh™ M2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STU16N65M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds718 pF @ 100 V

Product details

The STU16N65M2 is an N-channel power MOSFET from ST's MDmesh™ M2 series, rated at 650 V drain-to-source with 11 A continuous drain current at 25 °C case temperature. It comes in a through-hole TO-251 (IPAK) package — three short leads, no heatsink tab exposed, sized for compact PCB mounting where a TO-220 would crowd the layout.

Mounting and thermal — TO-251 constraints

The TO-251 (IPAK) package has a short lead form and a plastic body that sits flush against the PCB. No metal tab for external heatsinking — all 110 W maximum power dissipation (at Tc=25 °C) must be pulled through the copper pad and PCB plane. For continuous operation above a few amps, a dedicated drain copper area on the board is required; the datasheet's thermal impedance curve (junction-to-ambient) should guide the pad size. The through-hole leads suit wave-solder assembly but take up more board area than a DPAK — plan the keep-out zone accordingly.

Derate the 11 A current rating above 100 °C case temperature per the datasheet curve.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of STU16N65M2?

Maximum on-resistance is 360 mOhm at 5.5 A drain current with 10 V gate drive. This is the value used for conduction loss calculations in a hard-switched converter.

Is STU16N65M2 RoHS compliant?

Yes, the STU16N65M2 is ROHS3 compliant.

What is the closest pin-compatible alternative to STU16N65M2 in this component family?

For a dual-source qualification, compare 650 V N-channel MOSFETs in TO-251 (IPAK) with Rds(on) near 360 mOhm and gate charge around 19.5 nC — but each candidate must be validated for your specific gate drive voltage and switching frequency.