STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 11 A continuous drain, 380 mOhm Rds(on) at 10 V, 17 nC gate charge, TO-251-3 (IPAK) through-hole, -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 580 pF @ 100 V |
The STU13N60M2 is an N-channel MOSFET in a TO-251-3 (IPAK) through-hole package.
Gate charge totals 17 nC at 10 V. Input capacitance is 580 pF at 100 V drain-source, which keeps the Miller plateau short and the switching energy per cycle low — useful for pushing the switching frequency above 100 kHz in a QR flyback or LLC converter.
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