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STMicroelectronics STU11N65M2

STU11N65M2 MOSFET N-CH 650V 7A IPAK, MDmesh II Plus

MPNSTU11N65M2
End of Life

STMicroelectronics MDmesh™ II Plus series, STU11N65M2, N-channel MOSFET, 650 V Vdss, 7 A Id, 670 mOhm Rds(on), through-hole TO-251 (IPAK) package.

$1.67Ref. price · indicative, final on quote
STMicroelectronics STU11N65M2 datasheet (PDF)
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STU11N65M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs670mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs12.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds410 pF @ 100 V

Product details

650 V N-channel with MDmesh II Plus — the switching loss profile

With a typical gate charge of 12.5 nC at 10 V and input capacitance of 410 pF at 100 V Vds, the gate-drive burden stays low enough that a simple driver or controller output can switch it at tens of kilohertz without excessive cross-conduction loss.

Junction temperature range — where it sits on the thermal map

Package and mounting — TO-251 (IPAK) through-hole

Housed in a TO-251-3 (IPAK) short-lead through-hole package, the STU11N65M2 suits wave-solder or manual assembly on single-layer or two-layer boards where a surface-mount DPAK footprint is not preferred.

Frequently asked questions

What is the closest replacement or equivalent for STU11N65M2?

For a second-source evaluation, compare parts with the same 650 V Vdss, 7 A Id, and TO-251 (IPAK) package in the MDmesh II Plus family.