STMicroelectronics · MDmesh™ II Series
STMicroelectronics MDmesh™ II series, STU10NM60N, N-Channel MOSFET, 600 V Vdss, 10 A Id, 550 mOhm Rds(on) @ 4 A, 10 V, 19 nC Qg, TO-251 (IPAK) through-hole package, -55 to 150 °C operating junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 540 pF @ 50 V |
The TO-251 (IPAK) package dissipates up to 70 W at the case, but that assumes the tab is soldered to a copper island on the PCB or clamped to a heatsink. In a typical through-hole layout with no added heatsink, the effective power dissipation drops to roughly 2-3 W before the junction hits 150 °C.
