STMicroelectronics MDmesh™ II series, STU10NM60N, N-Channel MOSFET, 600 V Vdss, 10 A Id, 550 mOhm Rds(on) @ 4 A, 10 V, 19 nC Qg, TO-251 (IPAK) through-hole package, -55 to 150 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 540 pF @ 50 V |
The TO-251 (IPAK) package dissipates up to 70 W at the case, but that assumes the tab is soldered to a copper island on the PCB or clamped to a heatsink. In a typical through-hole layout with no added heatsink, the effective power dissipation drops to roughly 2-3 W before the junction hits 150 °C.
The STF10NM60N is the fully isolated TO-220FP (full-pack) variant, while the STU10NM60N uses the TO-251 (IPAK) with a conductive tab. The STF version offers electrical isolation between the drain tab and the heatsink, eliminating the need for an insulating washer. The STU version is smaller and suited for wave-solder through-hole assembly where the tab can be soldered to a PCB copper area.