Rds(on) is specified at 30 mOhm max with 4.5 V on the gate, and the drive voltage range covers 2.5 V to 4.5 V — so a 3.3 V logic GPIO can turn it on hard, though the on-resistance will be higher at the lower drive. Total gate charge is 4.6 nC at 4.5 V, which means a microcontroller pin can switch the gate directly at moderate frequency without a driver IC; the input capacitance of 367 pF at 16 V drain gives a sense of the switching speed ceiling.

STR2N2VH5 N-Channel MOSFET, 20 V, 2.3 A, 30 mOhm Rds(on)
STMicroelectronics STripFET™ V, STR2N2VH5, N-Channel MOSFET, 20 V Vdss, 2.3 A Id, 30 mOhm Rds(on) at 4.5 V, SOT-23-3, -55°C to 150°C.
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Tj) |
| Power dissipation | 350mW (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 700mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 30mOhm @ 2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 367 pF @ 16 V |
Product details
Frequently asked questions
What is the Rds(on) of STR2N2VH5?
Maximum on-resistance is 30 mOhm at a drain current of 2 A and a gate-source voltage of 4.5 V — this is the figure to use for worst-case conduction loss calculations in a load-switch or low-side switching application.
Is STR2N2VH5 available via RFQ confirmation?
Stock is confirmed at quote time against your specific order. Submit an RFQ with quantity and target date-code, and we will source sealed reels from our supply chain — no blanket stock claim is carried on this listing.