Rds(on) is specified at 30 mOhm max with 4.5 V on the gate, and the drive voltage range covers 2.5 V to 4.5 V — so a 3.3 V logic GPIO can turn it on hard, though the on-resistance will be higher at the lower drive. Total gate charge is 4.6 nC at 4.5 V, which means a microcontroller pin can switch the gate directly at moderate frequency without a driver IC; the input capacitance of 367 pF at 16 V drain gives a sense of the switching speed ceiling.
STR2N2VH5
STMicroelectronics · STripFET™ V Series
STMicroelectronics STripFET™ V, STR2N2VH5, N-Channel MOSFET, 20 V Vdss, 2.3 A Id, 30 mOhm Rds(on) at 4.5 V, SOT-23-3, -55°C to 150°C.
[IN STOCK] In Stock: 25 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Tj) |
| Power dissipation | 350mW (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 700mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 30mOhm @ 2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 367 pF @ 16 V |
Technical details
STR2N2VH5
[ALLOC] verified