650 V SiC Schottky with zero-recovery switching
The STPSC8H065G2Y-TR is a silicon-carbide Schottky diode from STMicroelectronics, rated 650 V reverse voltage and 8 A average rectified current. The zero reverse recovery time eliminates the switching-loss term that dominates in silicon fast-recovery diodes, making this part a direct fit for hard-switched PFC stages, DC-DC converters, and traction inverters where every watt of switching loss hits the thermal budget.
The AEC-Q101 qualification places this diode in the automotive-grade tier. The D2PAK HV surface-mount package is the high-voltage variant with extended creepage distance between the tab and the leads.
Forward drop and leakage at the operating point
Maximum forward voltage is 1.65 V at 8 A. Reverse leakage is 80 µA at 650 V.
The ECOPACK2 designation confirms RoHS compliance and no halogens above the threshold.