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STMicroelectronics STPSC8H065DLF — Discrete Semiconductors

ST STPSC8H065DLF SiC Schottky Diode, 650 V 8 A, 0 ns trr

MPNSTPSC8H065DLF
Active

STMicroelectronics STPSC8H065DLF, Silicon Carbide Schottky Diode, 650 V DC Reverse, 8 A Average Rectified, 0 ns Reverse Recovery Time, -40°C~175°C Junction, 8-PowerVDFN PowerFlat HV, Surface Mount, ECOPACK®2, Active.

$3.9200Ref. price · indicative, final on quote
STMicroelectronics STPSC8H065DLF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC8H065DLF specifications
ParameterValue
SeriesECOPACK®2
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.55 V @ 8 A
Current - reverse leakage @ vr80 µA @ 650 V
Current - average rectified8A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerVDFN
Capacitance @ vr,460pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

The STPSC8H065DLF is a silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 8 A average rectified current.

650 V / 8 A — derating and thermal margin

Rated for 650 V reverse voltage and 1.55 V forward drop at 8 A. At 175°C junction, leakage is 80 µA at 650 V.

PowerFlat HV package — footprint and thermal path

Housed in an 8-PowerVDFN (PowerFlat 8x8 HV) surface-mount package, the exposed pad provides a low-inductance thermal path to the PCB. The 460 pF capacitance at 0 V is typical for this die size — account for it in the switching node capacitance budget when selecting the gate-drive resistor for the upstream MOSFET.

Frequently asked questions

What is the reverse recovery time of STPSC8H065DLF?

The reverse recovery time (trr) is 0 ns. As a silicon carbide Schottky diode, it has no stored minority charge, so there is no reverse-recovery current spike during turn-off.