650 V / 8 A SiC Schottky — what it replaces and why
The STPSC8H065DI is a 650 V, 8 A Silicon Carbide Schottky diode from STMicroelectronics, housed in a TO-220AC insulated package. Its zero reverse-recovery charge eliminates the switching losses that plague silicon ultrafast diodes in hard-switched topologies — PFC boost stages, LLC converters, and flyback snubbers all benefit.
Forward drop and conduction loss trade-off
The net loss at switching frequencies above 50 kHz usually favours the SiC part because the recovery loss term disappears. Reverse leakage at rated voltage is 80 µA, negligible for most designs.
Package and mounting — insulated TO-220AC
The TO-220AC insulated package (supplier device package TO-220AC ins) has the metal tab electrically isolated from the cathode. That saves an isolation pad and a washer when bolting to a heatsink — one less assembly step and a lower thermal resistance path. Through-hole mounting keeps it serviceable in field-repairable units.