SiC Schottky with zero switching loss
The STPSC8H065D is a 650 V, 8 A silicon carbide Schottky diode from STMicroelectronics.
The 650 V reverse rating gives 200 V of headroom above a typical 400 V PFC bus — enough to survive line transients without avalanche stress. At 8 A average, the part handles a 1.6 kW single-phase PFC stage (230 VAC input) with margin. Forward voltage is 1.75 V at 8 A, so conduction loss at full load is about 14 W; a TO-220AC package with a modest heatsink keeps the junction below the 175 °C maximum. That extra headroom matters in sealed enclosures or high-ambient motor-drive bays where the heatsink temperature runs above 100°C.
Supplied in a TO-220AC through-hole package (the two-lead variant of the standard TO-220). The tab is the cathode — it connects directly to the heatsink interface.
ROHS3 compliant per the listing. No official second-source cross-reference is published, but the 650 V / 8 A SiC Schottky space includes pin-compatible parts from Wolfspeed and Rohm if dual-sourcing is required.