650 V SiC Schottky — zero recovery, common-cathode pair
Each diode is rated for 650 V reverse voltage and 4 A average rectified current (Io). The headline spec is the zero reverse recovery time (trr = 0 ns), which means no recovery charge to dissipate — switching losses are essentially eliminated, and the diode produces none of the ringing that a fast-recovery silicon diode would inject into the layout.
A silicon fast-recovery diode has a finite trr that forces a dead-time penalty and generates a current spike that couples into the gate drive and the output. The STPSC8H065CT's zero trr eliminates that spike entirely. The forward voltage is 1.75 V max at 4 A, which is typical for a 650 V SiC Schottky — the trade-off is a slightly higher Vf than a comparable silicon hyperfast diode, but the switching-loss savings more than offset it above 50 kHz. Reverse leakage at 650 V is 40 µA, a figure that stays low at high temperature because SiC's wide bandgap holds leakage in check.