The STPSC8H065B-TR is a Silicon Carbide Schottky diode from STMicroelectronics rated for 650 V reverse voltage and 8 A average rectified current. The junction is rated up to 175 °C, which gives thermal headroom for compact layouts where the diode sits close to hot magnetics or a heatsink.
1.75 V forward drop at 8 A — thermal design point
At the full 8 A rated current the forward voltage is 1.75 V, which translates to about 14 W of conduction loss at peak load. That is higher than a comparable ultrafast silicon diode at the same current, but the SiC Schottky's lack of reverse recovery charge means the switching loss term is near zero — at frequencies above 50 kHz the total dissipation is usually lower than a silicon part. The 414 pF junction capacitance at 0 V is moderate; it contributes a small capacitive turn-on loss per cycle that becomes significant only above 200 kHz.
DPAK package — footprint and thermal path
The part comes in a TO-252-3 (DPAK) surface-mount package with two leads and a tab. The DPAK footprint is standard and shared with many 5 A to 10 A diodes, so a board layout designed for a silicon ultrafast diode in the same package will accept this SiC part with no changes.