SiC Schottky that kills the recovery loss
The STMicroelectronics STPSC8065DY is an automotive-grade silicon carbide (SiC) Schottky diode rated for 650 V reverse voltage and 8 A average rectified current, packaged in a through-hole TO-220AC. Its zero reverse recovery time (trr = 0 ns) eliminates the switching-loss tail that plagues silicon ultrafast diodes in hard-switched topologies — a direct efficiency gain for PFC boost stages, DC-DC converters, and freewheeling paths in automotive traction inverters or on-board chargers. The AEC-Q101 qualification and 175 °C junction temperature rating confirm it for under-hood and high-ambient environments where silicon parts would need aggressive derating.
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What the zero trr means for the BOM
Zero reverse recovery (trr = 0 ns) eliminates switching losses in hard-switched topologies. Forward voltage is 1.45 V max at 8 A.