SiC Schottky pair with zero recovery loss
The STPSC6TH13TI is a 650 V, 6 A silicon carbide Schottky diode array from STMicroelectronics, configured as one pair in series connection inside a single TO-220AB insulated package. Its zero reverse recovery time (trr = 0 ns) eliminates the switching-loss term that dominates a standard ultrafast diode's dissipation in hard-switched topologies above 100 kHz. Rated junction temperature spans -40°C to 175°C, so the part holds its forward voltage and leakage profile in a cramped power supply where ambient heat pushes the junction well above 125°C.
The 650 V DC reverse voltage gives 1.3× derating on a 400 V DC bus (typical PFC output), leaving headroom for switching overshoot without avalanche stress. Each diode in the pair handles 6 A average rectified current; the series configuration suits a centre-tapped secondary rectifier or a two-diode clamp where the total output current splits across the two junctions. Maximum forward voltage is 1.75 V at 6 A, 25°C — the SiC Schottky barrier is higher than a Si Schottky, but the zero-recovery benefit offsets the conduction loss in any switching application above 50 kHz. Reverse leakage at 650 V is 60 µA typical at 25°C; expect it to rise with temperature, but the SiC wide-bandgap structure keeps leakage an order of magnitude lower than a Si fast diode at the same junction temperature.
Where it goes — PFC, flyback, and high-temp enclosures
The zero-recovery switching makes this diode array a natural fit for continuous-conduction-mode (CCM) boost PFC stages, LLC resonant converters, and flyback secondary rectification where a SiC diode eliminates the snubber network. The 175°C junction rating and insulated TO-220AB package suit outdoor telecom rectifiers, on-board chargers, and industrial power supplies where the heatsink must share a grounded chassis without an isolation pad.