Active SiC Schottky — 1200 V, 6 A, zero recovery
The STPSC6H12B-TR1 is an STMicroelectronics Silicon Carbide Schottky diode rated for 1200 V reverse voltage and 6 A average rectified current, with zero reverse recovery time — it switches off instantly, no stored charge to clear.
What the ratings mean for a PFC or flyback stage
The 1200 V blocking voltage gives headroom in 400 VDC bus applications (PFC output, three-phase rectifier) — the SiC Schottky structure eliminates the reverse-recovery spike that forces silicon ultrafast diodes into derating at high dV/dt. Forward drop is 1.9 V max at 6 A — conduction loss at full load is about 11.4 W, which the DPAK package must sink through the exposed pad. The 330 pF junction capacitance at 0 V contributes to switching loss at high frequency; a 100 kHz hard-switched stage sees roughly 0.5 W additional loss from Coss charging. Reverse leakage is 400 µA at 1200 V — negligible at room temperature but rises exponentially with junction temperature; at 175 °C the leakage power can approach 0.5 W, so the thermal model should include it.
DPAK footprint and thermal management
The TO-252-3 (DPAK) surface-mount package with exposed tab — standard reflow profile, no special bake unless the reel moisture indicator card shows >30% RH. The tab is the cathode; the PCB copper area under the tab sets the junction-to-ambient thermal resistance. Tape & Reel packaging (TR) — 2500 units per reel, 13-inch reel, suitable for automated pick-and-place. Cut Tape (CT) also available for prototype or low-volume builds.
Compliance and shelf life
ROHS3 compliant — no exemptions, no conflict with EU or global RoHS requirements. The junction temperature range of -40 to 175 °C covers industrial and under-hood automotive environments.