SiC Schottky — zero recovery, hard-switching workhorse
The STPSC6H065G-TR is a 650 V, 6 A silicon-carbide Schottky diode from STMicroelectronics, housed in a D²PAK surface-mount package.
A conventional ultrafast diode with a 30 ns trr still dumps a current spike into the switch every cycle. This SiC part has no recovery tail at all — the current through it simply stops when the voltage reverses. That cleans up the switching node ringing and reduces the snubber requirements. The 300 pF capacitance at 0 V is typical for a 6 A SiC die; it will charge and discharge every cycle, so the effective switching loss is dominated by the output capacitance term, not recovery charge.
Forward drop and leakage at temperature
Maximum forward voltage is 1.75 V at 6 A. That is higher than a comparable ultrafast silicon diode, but the zero-recovery benefit usually outweighs the conduction loss in designs above 100 kHz. Reverse leakage is 60 µA at 650 V — expect it to rise with junction temperature, but SiC leakage stays well below silicon at high temperature, which is one reason the junction can be rated to 175 °C.