SiC Schottky — the part that kills the recovery tail
The STPSC6H065DLF is a silicon-carbide Schottky diode rated for 650 V reverse and 6 A forward continuous current. That makes it the right choice for hard-switched PFC stages and resonant converters where a fast-recovery Si diode would leave a recovery tail that heats the junction.
Junction temperature and package — the thermal budget
The junction temperature range extends from -40 °C to 175 °C, which is wider than most ultrafast silicon diodes and gives headroom in high-ambient or tightly enclosed power stages. The part comes in an 8-PowerVDFN package (PowerFlat 8x8 HV) — the large copper pad under the die sinks heat into the PCB plane, so the board layout and via count directly set the thermal resistance.
Forward drop and leakage — what to expect at full load
Maximum forward voltage is 1.55 V at 6 A — the conduction loss at rated current is about 9.3 W, which the package must shed. Reverse leakage is 60 µA at 650 V, a typical SiC figure that rises with temperature but stays well below the leakage of a comparably rated ultrafast silicon diode at high junction temperatures.