SiC Schottky — what the 650 V / 6 A rating means for your power stage
The STPSC6H065DI is a 650 V, 6 A Silicon Carbide Schottky diode in a TO-220AC insulated package. The SiC Schottky technology delivers near-zero reverse recovery charge — the diode turns off like an ideal switch, so a hard-switched PFC or flyback converter sees minimal switching loss from the diode alone. That 1.75 V forward drop at 6 A sets the conduction loss: at full rated current you're looking at 10.5 W of dissipation, which the TO-220AC insulated tab must sink through the heatsink — the junction-to-case thermal path is the limiter, not the die itself.
Junction temperature range and deployment envelope
The 60 µA reverse leakage at 650 V is typical for SiC — higher than a silicon ultrafast, but the switching-loss savings in a 100 kHz+ hard-switched topology more than compensate. Plan the heatsink for the 175°C Tj max, and the leakage won't run away.
Lifecycle and compliance — no surprises for production
No end-of-life risk for current designs, and no substance restrictions blocking EU or global shipping. The base product number STPSC6 covers the family; the DI suffix denotes the TO-220AC insulated package variant.
Package and board-fit — TO-220AC insulated tab
Through-hole mounting in the TO-220-2 Insulated / TO-220AC package. The fully insulated tab means no mica washer or thermal pad needed — the device sits directly on the heatsink, which simplifies assembly and reduces thermal resistance. The 2-pin layout is standard for TO-220AC; the cathode tab is the output terminal, so the heatsink is at cathode potential. No exposed metal on the tab face — the insulation is rated for the full 650 V blocking voltage.