STMicroelectronics STPSC6H065BY-TR — Discrete Semiconductors
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STMicroelectronics / Discrete Semiconductors

STPSC6H065BY-TR SiC Schottky 650V 6A DPAK AEC-Q101

MPN STPSC6H065BY-TR
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

STMicroelectronics STPSC6H065BY-TR SiC Schottky diode, 650 V, 6 A, DPAK (TO-252) surface mount, AEC-Q101 automotive grade, tape and reel.

In Stock: 5,000 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$2.90 / pc
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$2.90
10+ pcs
$2.61
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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Speed / Frequency No Recovery Time > 500mA (Io)

Full Technical Specifications

13 Parameters
STPSC6H065BY-TR specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Current - reverse leakage @ vr60 µA @ 650 V
Current - average rectified6A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Capacitance @ vr,300pF @ 0V, 1MHz
Reverse recovery time0 ns
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Technical Details & Description

SiC Schottky with zero reverse recovery

The STPSC6H065BY-TR is a silicon carbide Schottky diode rated 650 V reverse voltage and 6 A average rectified current in a DPAK surface-mount package. The SiC technology eliminates reverse recovery charge — trr is 0 ns — so hard-switched topologies like boost PFC and DC-DC converters in hybrid/EV powertrains see no switching loss from diode recovery. AEC-Q101 qualification means the part passed automotive-grade reliability screening: high-temperature reverse bias (HTRB), temperature cycling, and surge testing. The junction temperature range -40 to 175 °C matches the under-hood thermal profile, with the 175 °C ceiling exploiting the SiC die's inherent high-temperature capability rather than a silicon limit.

Switching loss and thermal budget

Zero recovery time means the diode contributes no reverse-recovery loss in a hard-switched bridge — the MOSFET or IGBT turns on into a diode that is already blocking. At a 100 kHz switching frequency typical of automotive PFC stages, eliminating the 50-100 nC recovery charge of a comparable silicon ultrafast diode cuts several watts of loss from the thermal budget. Capacitance is 300 pF at 0 V, 1 MHz. This is the output capacitance that stores energy during the off-state and dissipates it on turn-on. For a 400 V DC bus, the stored energy per cycle is roughly 0.5 × C × V² = 24 µJ; at 100 kHz that is 2.4 W of capacitive loss. The low C keeps this manageable and is a direct result of the SiC Schottky structure. Reverse leakage is 60 µA at 650 V, 25 °C. Leakage doubles every 10-15 °C in SiC Schottkys; at 175 °C junction temperature it reaches roughly 2-3 mA. The 6 A forward rating gives adequate margin — the leakage-induced power dissipation at 175 °C and 400 V bus is under 1.2 W, well within the DPAK package's thermal capability when mounted on a reasonable copper area.

Package and mounting

The DPAK (TO-252) package has a standard footprint for 6 A-class surface-mount diodes. The exposed metal tab is the cathode and is the primary thermal path: soldering the tab to a PCB copper pour (at least 1 in² recommended for full current) keeps the junction-to-ambient thermal resistance below 60 °C/W. The part is supplied on tape and reel for automated pick-and-place assembly.

Sourcing and lifecycle

STMicroelectronics lists the STPSC6H065BY-TR as Active — no end-of-life notice, no last-time-buy window. The part is ROHS3 compliant with full material declaration available. Sourced through authorized distribution; pricing and lead time confirmed at RFQ against the BOM quantity.

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