SiC Schottky — zero-recovery switching for PFC and flyback stages
The STPSC6H065B-TR is a 650 V, 6 A silicon carbide Schottky diode from STMicroelectronics built for power conversion circuits where switching losses dominate the thermal budget. Its zero reverse recovery time (trr = 0 ns) eliminates the stored-charge tail that forces silicon ultrafast diodes into higher dissipation and snubber overhead.
The zero reverse recovery time is the headline spec that separates this part from any silicon P-N or ultrafast diode. In a boost PFC running at 100 kHz, a silicon diode with 35 ns trr would dump several watts of recovery loss into the junction; this SiC Schottky simply turns off the instant the voltage reverses. The 300 pF capacitance at 0 V is the only charge that must be moved per cycle, and that is orders of magnitude smaller than stored minority-carrier charge. The practical result is lower heatsink requirement, higher achievable switching frequency, and reduced EMI from the recovery snap. For a 6 A average current, the 1.75 V forward drop at 6 A is competitive with silicon ultrafast parts in the same current class, but the switching loss advantage grows with frequency.
No last-time-buy or end-of-life notice has been issued.
DPAK footprint and thermal design
The TO-252 (DPAK) package with two leads and a tab is a standard surface-mount power package. The tab is the cathode connection and carries the bulk of the heat — a proper copper land and via array under the tab is essential to keep the junction temperature below 175°C at full 6 A load. The 60 µA reverse leakage at 650 V is typical for SiC at room temperature; it roughly doubles for every 10°C rise, so the thermal design must account for leakage-induced self-heating at high line and high ambient.