650 V / 6 A SiC Schottky — the PFC and boost-stage selection
The STPSC6C065DY is a Silicon Carbide Schottky diode from STMicroelectronics, specified for 650 V reverse voltage and 6 A average rectified current. The SiC Schottky construction eliminates reverse-recovery charge, so switching losses stay near-zero even at hard-switching frequencies — a key advantage over ultrafast silicon diodes in power-factor-correction (PFC) stages, boost converters, and flyback snubbers. The 1.75 V forward drop at the rated 6 A is typical for a 650 V SiC part at this current level; the real efficiency gain comes from the lack of recovery tail, not the forward voltage.
175 °C junction — built for under-hood and engine-bay thermal profiles
Rated junction temperature spans -40 °C to 175 °C. That 175 °C ceiling is the threshold automotive power-train and engine-bay designs need — many industrial-grade SiC diodes stop at 150 °C. The ECOPACK2 finish is lead-free and RoHS-compliant; no whisker-risk concern for mission-life products.
TO-220-2 through-hole — footprint and mounting
In a TO-220-2 (TO-220AC) through-hole package. The two-lead format is the standard SiC Schottky outline for PFC and boost stages — mates to a heatsink with a single M3 screw and a thermal pad or grease. The through-hole mount suits wave-solder assembly and field-replaceable modules. MSL 1 (no moisture sensitivity) out of the tube; no bake required before reflow if the original packaging is intact.
Listed as Active. No last-time-buy window has been announced. For a production BOM that already qualifies this part, the supply outlook is stable through the current planning horizon. The base product number STPSC6 covers a family of 650 V SiC Schottky diodes at various current ratings and packages; the DY suffix denotes the TO-220-2 variant with AEC-Q101 qualification. If a second-source or form-fit-function alternate is needed for dual-sourcing, evaluate the SiC Schottky portfolio from the same voltage class — same package, same pinout, same thermal pad hole pattern.