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STMicroelectronics STPSC606G-TR — Discrete Semiconductors

STPSC606G-TR SiC Schottky Diode, 600 V 6 A, Zero trr

MPNSTPSC606G-TR
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STMicroelectronics STPSC606G-TR Silicon Carbide Schottky Diode, 600 V DC reverse, 6 A average rectified, zero reverse recovery time, D2PAK surface-mount package.

$3.0900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC606G-TR specifications
ParameterValue
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 6 A
Current - reverse leakage @ vr75 µA @ 600 V
Current - average rectified6A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,375pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

Zero reverse recovery — the SiC switching advantage

That eliminates the switching loss spike that limits silicon ultrafast diodes in hard-switched topologies.

175 °C junction — thermal headroom for dense power stages

The 1.7 V forward drop at 6 A and 75 µA reverse leakage at 600 V are typical values at 25 °C; the SiC material keeps leakage under control well above 100 °C, unlike silicon Schottky diodes that run away thermally.

D2PAK footprint — reflow-ready with exposed tab

The tab is the drain/cathode connection. Standard reflow profiles for lead-free solder apply; the package is compatible with tape-and-reel (TR) or cut-tape (CT) quantities for prototyping or production.

Frequently asked questions

What is the reverse recovery time of STPSC606G-TR?

The reverse recovery time (trr) is 0 ns. As a Silicon Carbide Schottky diode, it has no minority carrier storage and therefore no reverse recovery charge — it switches off instantly at any forward current and junction temperature.

Can STPSC606G-TR replace a standard ultrafast silicon diode in a PFC boost stage?

Yes, in most hard-switched topologies the SiC Schottky eliminates the reverse-recovery loss that limits silicon ultrafast diodes. The 600 V / 6 A rating and D2PAK footprint are direct replacements for common TO-263-packaged ultrafast diodes. The trade-off is a slightly higher forward voltage (1.7 V at 6 A) versus a silicon part, but the switching-loss savings typically more than compensate above 50 kHz.