SiC Schottky for PFC and flyback rectification
The STPSC4H065DI is a 650 V, 4 A Silicon Carbide Schottky diode from STMicroelectronics in the TO-220AC insulated package. As a SiC Schottky, it offers near-zero reverse recovery charge, which cuts switching losses in continuous-conduction-mode PFC stages, flyback output rectifiers, and secondary-side freewheeling in telecom and server power supplies.
650 V blocking and 4 A forward — where it fits
With a 650 V DC reverse voltage rating, this diode comfortably blocks the 400 V bus in a power-factor-correction stage with margin for transients. The 4 A average rectified current suits moderate-power designs — think 250 W to 500 W PFC boost stages or LLC converters. Reverse leakage is 40 µA at 650 V, a figure that stays low across temperature compared to silicon, keeping standby losses in check.
175°C junction — the SiC thermal advantage
The -40°C to 175°C operating junction range is a hallmark of SiC. In a hot PFC stage or enclosed power supply, the higher Tj max means the diode can run hotter without needing a larger heatsink or forced air. This directly translates to board area savings or higher output power in the same footprint. The insulated TO-220AC package simplifies heatsink mounting — no isolation pad, reducing thermal resistance and assembly cost.
Production status and supply
STMicroelectronics lists the STPSC4H065DI as an active product.