The STPSC4H065B-TR is a 650 V, 4 A silicon carbide Schottky diode from STMicroelectronics, built for hard-switched power converters where reverse recovery losses eat into efficiency. The DPAK surface-mount package (TO-252-3) keeps the board footprint compact for designs up to several hundred watts.
Zero trr — the spec that kills switching losses
The 0 ns reverse recovery time is not a marketing rounding — it is physically zero because a SiC Schottky has no minority carriers. In a 100 kHz PFC boost stage, swapping a 50 ns trr ultrafast silicon diode for this part cuts the recovery-related dissipation to zero, which shows up as measurable efficiency gain and lower heatsink temperature. The forward voltage drop is 1.75 V at the rated 4 A, typical for a 650 V SiC Schottky of this current class; the trade-off is the higher Vf versus a silicon hyperfast, but the switching loss elimination more than compensates above 50 kHz.
Active product — no LTB clock ticking
ST lists the STPSC4H065B-TR as Active.
175°C junction — thermal headroom for compact builds
In a sealed power supply with limited airflow, the high Tj max gives the thermal designer margin — the junction can hit 150°C under full load and still stay 25°C below the absolute limit. The 200 pF capacitance at 0 V is low enough that capacitive switching losses remain modest even at several hundred kilohertz.