1200 V SiC Schottky — zero-recovery switching for automotive traction
This part carries AEC-Q101 qualification, so the PPAP documentation and grade-level testing are already on file for automotive OEM submission.
The zero reverse recovery time means the STPSC40H12CWY contributes no turn-off loss in a hard-switched topology. In a 1200 V silicon PiN diode, the recovery charge at rated current can exceed 10 µC, dumping both loss and EMI into the bridge. This SiC Schottky eliminates that entirely. Forward drop is 1.5 V at 20 A — higher than a comparable PiN at high current, but the total loss at switching frequencies above 20 kHz is lower because the switching component is gone. Leakage at the full 1200 V blocking voltage is 120 µA, which is negligible in a 20 A rail, but worth checking for light-load efficiency targets.
Junction temperature and package — thermal budget for underhood
The TO-247-3 through-hole package is the standard for high-power discrete diodes — the large tab provides a direct thermal path to the heatsink. For a dual-diode common-cathode configuration, both die share the same tab, so the thermal resistance is effectively parallel. The mounting torque and insulator choice follow the TO-247 standard; no special hardware required.
For a current-production SiC diode in automotive grade, the typical lead time runs through ST's authorized distribution channel. No replacement is needed — it is still in the active portfolio.