SiC Schottky — zero-recovery switching for PFC and flyback stages
Its SiC Schottky structure delivers zero reverse recovery time (trr = 0 ns), which eliminates the switching losses and EMI typical of ultrafast silicon diodes in hard-switched topologies. The 175°C maximum junction temperature suits high-density power supplies, PFC stages, and flyback converters where thermal margin is tight.
Obsolete — plan your last-time-buy or cross now
ST has marked the STPSC406D as Obsolete. That means no further production runs — no LTB window to stock up. Verify pin-compatibility against your layout before swapping.
What the zero trr means for your BOM
Zero reverse recovery is the reason to pick this part over a standard ultrafast silicon diode. In a continuous-conduction-mode PFC, the diode's recovery charge is the dominant switching loss contributor. With trr = 0 ns, the STPSC406D eliminates that loss entirely — the MOSFET turns on into a diode that is already blocking, so no reverse-recovery current spike stresses the switch. That translates directly into lower heatsink requirements and higher efficiency at light load. The 200 pF capacitance at 0 V is low enough to keep the switching node snappy without excessive ringing, provided the PCB layout keeps the loop tight.