Zero trr — what the SiC Schottky buys the converter
This eliminates the switching loss component that dominates in hard-switched PFC, flyback, and LLC converters using silicon ultrafast rectifiers.
600 V / 4 A — application headroom in PFC and flyback
The 600 V reverse voltage and 4 A average forward current (Io) position this diode for the output rectifier in 200–500 W flyback converters and the boost diode in single-phase PFC stages. The forward voltage is 1.9 V max at 4 A, a moderate Vf that reflects the wide bandgap — the trade-off is low switching loss, not low conduction loss. Reverse leakage is 50 µA at 600 V, which is typical for a 4 A SiC Schottky and stays well below the 1 mA threshold that would affect standby power in a lightly loaded PFC.
175 °C junction — thermal margin for industrial and automotive
The 175 °C ceiling gives 25 °C of additional headroom over silicon diodes limited to 150 °C, which matters when the PCB copper pour is constrained.
DPAK footprint — thermal and assembly notes
The TO-252-3 (DPAK) package has an exposed tab that is electrically the cathode. The 200 pF capacitance at 0 V is low enough that it does not contribute significant switching loss at frequencies up to 200 kHz.
It is ROHS3 compliant. No official successor or second-source cross-reference is recorded — the part is sole-sourced from ST for the SiC Schottky family.