650 V, 20 A — SiC Schottky for hard-switching automotive power
The STPSC40065CWY is a 650 V, 20 A average-rated silicon-carbide Schottky diode from STMicroelectronics, in a TO-247-3 through-hole package.
Zero reverse recovery — no switching loss tail
Because the SiC Schottky barrier has no stored minority charge, the reverse recovery time is 0 ns. The datasheet specifies no recovery time above 500 mA output current, which means in a continuous-current-mode boost or totem-pole PFC stage the diode contributes zero reverse-recovery loss — the dominant loss mechanism in ultrafast silicon diodes at high frequency.
175 °C junction, AEC-Q101, and RoHS compliance
The maximum junction temperature is 175 °C, and the AEC-Q101 qualification covers the stress and lifetime requirements for automotive power-train and body-electronics environments. The ECOPACK®2 series designation indicates a lead-free, halogen-free moulding compound.
TO-247-3 package — thermal and layout checklist
The TO-247-3 package has a large copper tab for heat-sink mounting. The cathode is electrically connected to the tab, so the thermal pad must be isolated or the heat sink must float. The 1250 pF junction capacitance at 0 V, 1 MHz is a design input for snubber sizing in hard-switching stages.