650 V SiC Schottky — zero-recovery switching for PFC and inverter stages
It is rated for 650 V reverse voltage and 20 A average rectified current per diode, with a forward voltage drop of 1.7 V max at 20 A. The SiC Schottky technology eliminates reverse recovery charge, so the diode switches off with negligible current tail. This cuts switching losses in hard-switched topologies — boost PFC, half-bridge, and full-bridge converters — where a silicon ultrafast diode would add 50-100 ns of recovery loss per cycle.
175 °C junction — thermal headroom for sealed enclosures
Rated junction temperature spans -40°C to 175°C, allowing the part to deliver full rated current in high-ambient environments without derating. The TO-247-3 package with a large copper tab conducts heat to the heatsink efficiently; the 300 µA reverse leakage at 600 V is typical for a 650 V SiC die at 25°C and rises with temperature, but the wide bandgap keeps it manageable up to 175°C.