The STPSC2H12D is a Silicon Carbide Schottky diode from STMicroelectronics, rated for 1200 V reverse voltage and 2 A average rectified current. That eliminates the reverse-recovery current spike that plagues ultrafast silicon diodes in hard-switched topologies, which means the switching transistor sees no added turn-on stress and the snubber network can often be simplified or removed.
1200 V rating and 175 °C junction
The 1200 V blocking voltage gives comfortable margin on a 400 VDC bus — the derating for SiC is less aggressive than silicon, so a 1200 V part on a 400 V rail runs well within its safe operating area. The junction temperature range extends from -40°C to 175°C, which is a step beyond typical 150 °C Si limits; that extra headroom matters when the diode is packed into a cramped power supply with limited airflow.
Forward drop and leakage at temperature
Maximum forward voltage is 1.5 V at 2 A — a figure that rises with junction temperature, but SiC Schottkys have a positive temperature coefficient that makes them easy to parallel without thermal runaway. Reverse leakage at 1200 V is 12 µA, which is low enough to ignore at room temperature but climbs with heat; budget for it in the thermal calculation if the diode runs continuously near its 175 °C limit.
The ECOPACK®2 series designation means the package materials meet ST's halogen-free and antimony-free targets.