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STMicroelectronics STPSC2H12B2Y-TR — Discrete Semiconductors

STPSC2H12B2Y-TR SiC Schottky Diode, 1200 V, 5 A, DPAK

MPNSTPSC2H12B2Y-TR
Active

STMicroelectronics STPSC2H12B2Y-TR, Silicon Carbide Schottky Diode, 1200 V DC reverse voltage, 5 A average rectified current, Fast Recovery ≤ 500 ns, Surface Mount, DPAK (TO-252-3), -40°C to 175°C junction temperature.

$2.1000Ref. price · indicative, final on quote
STMicroelectronics STPSC2H12B2Y-TR datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC2H12B2Y-TR specifications
ParameterValue
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 2 A
Current - reverse leakage @ vr12 µA @ 1200 V
Current - average rectified5A
Operating temperature - junction-40°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Capacitance @ vr,190pF @ 0V, 1MHz

Product details

Silicon Carbide Schottky for high-voltage, fast-switching stages

The STMicroelectronics STPSC2H12B2Y-TR is a 1200 V, 5 A Silicon Carbide Schottky diode in a DPAK (TO-252-3) surface-mount package. Its SiC Schottky structure delivers zero reverse recovery charge, which eliminates the switching losses and EMI that plague ultrafast silicon diodes in hard-switched topologies. The 1.5 V forward drop at 2 A is typical for a 1200 V SiC part in this current class. Junction temperature spans -40°C to 175°C, so it handles the thermal cycling of a hot PFC stage or an onboard DC-DC converter without derating surprises.

No NRND or last-time-buy notice is associated with this order code. For a BOM freeze, this part is a safe selection for new designs today.

Frequently asked questions

Is STPSC2H12B2Y-TR RoHS compliant?

Yes, STPSC2H12B2Y-TR is ROHS3 compliant.

What are the key differences between STPSC2H12B2Y-TR and the standard STPSC2H12B2?

Both share the same SiC Schottky die and 1200 V / 5 A ratings. The -TR suffix indicates Tape & Reel packaging for automated assembly; the non-TR variant ships in tube or bulk. Electrically they are identical.

Can STPSC2H12B2Y-TR replace a standard ultrafast silicon diode in a PFC circuit?

Yes, and it is a common upgrade. The SiC Schottky structure eliminates reverse recovery charge, which cuts switching losses and reduces EMI compared to any ultrafast silicon diode. The 1200 V rating provides ample margin for 400 V bus PFC stages. The DPAK footprint is the same as many TO-252 silicon diodes, so the board layout often carries over with a BOM change only.