Silicon Carbide Schottky for high-voltage, fast-switching stages
The STMicroelectronics STPSC2H12B2Y-TR is a 1200 V, 5 A Silicon Carbide Schottky diode in a DPAK (TO-252-3) surface-mount package. Its SiC Schottky structure delivers zero reverse recovery charge, which eliminates the switching losses and EMI that plague ultrafast silicon diodes in hard-switched topologies. The 1.5 V forward drop at 2 A is typical for a 1200 V SiC part in this current class. Junction temperature spans -40°C to 175°C, so it handles the thermal cycling of a hot PFC stage or an onboard DC-DC converter without derating surprises.
No NRND or last-time-buy notice is associated with this order code. For a BOM freeze, this part is a safe selection for new designs today.