SiC Schottky — what the zero-recovery rating means for your power stage
Its defining characteristic is the zero reverse-recovery charge — listed as No Recovery Time > 500 mA — which eliminates the switching losses and ringing that plague ultrafast silicon diodes in hard-switched PFC, flyback, and boost converters.
Forward drop and leakage — the conduction-loss trade-off
At the rated 2 A forward current, the maximum forward voltage is 1.55 V. That is typical for a 650 V SiC Schottky at this current density — the wide-bandgap material trades a slightly higher Vf than a comparable ultrafast silicon diode for the elimination of recovery losses. Reverse leakage at 650 V is 20 µA, which stays low across temperature compared to silicon, so standby power in a lightly loaded supply stays under control.
Junction capacitance and switching behaviour
Capacitance at 0 V bias is 135 pF measured at 1 MHz. Because SiC Schottky capacitance is relatively voltage-independent compared to a PN diode, the switching energy per cycle is predictable across the load range. In a continuous-conduction-mode PFC stage, the zero recovery means the MOSFET turns on into a diode that is already off — no reverse-recovery current spike, so the EMI filter sees less high-frequency content.
The DPAK (TO-252) package is a single-gauge leadframe with the tab as the cathode. Will it survive the hot air? Yes — DPAK is one of the easier power packages to hand-rework: preheat the board from the back, hit the tab with a wide nozzle at 350°C, and lift the part without lifting the pad. Orientation is unambiguous — the tab is the cathode, the anode is the short pin opposite the tab. No pin-1 confusion.