Zero-recovery SiC Schottky – 20 A, 1200 V, DO-247
The STMicroelectronics STPSC20H12WL is a 1200 V, 20 A silicon carbide Schottky diode in a DO-247-2 through-hole package. The SiC material eliminates stored charge, so reverse recovery time is effectively zero – the diode turns off with no reverse current spike regardless of forward current or dI/dt. That is the headline advantage over any silicon fast-recovery or ultrafast diode in the same voltage class: you can hard-switch at high frequency without the recovery loss and ringing that plague silicon parts. Forward voltage is 1.5 V maximum at 20 A, and the junction is rated to 175 °C, giving thermal headroom over the usual 150 °C limit of silicon FREDs. Leakage at full rated voltage is 120 µA at 25 °C.
175 °C junction – what it buys the power stage
Rated junction temperature of 175 °C, 25 °C above the typical silicon diode ceiling, directly translates to a wider safe operating area in high-ambient or forced-convection-limited environments. In a motor-drive PFC stage or a 3-phase inverter, that extra margin means the heatsink can be smaller or the airflow lower before derating kicks in. The 20 A average rating at case temperature assumes proper thermal management – the DO-247 tab is the primary heat path, so plan a good thermal interface to the heatsink. The 1650 pF capacitance at 0 V is the junction capacitance; it will charge and discharge with the switching node, but the zero-recovery turn-off means no reverse-recovery charge to add to the switching loss.
Lifecycle status is listed as active. The base product number is STPSC20, and the series includes multiple current and voltage variants in the same DO-247 footprint, which gives the BOM some flexibility if ST releases a higher-rated drop-in later.