1200 V, 20 A SiC Schottky — the automotive-grade choice
The STPSC20H12GY-TR is an automotive-grade silicon carbide Schottky diode from STMicroelectronics, rated for 1200 V reverse voltage and 20 A average forward current. It is built on SiC Schottky technology, which delivers zero reverse recovery time (trr = 0 ns) — a decisive advantage over silicon ultrafast diodes in hard-switched power stages. The 175 °C Tj ceiling allows the part to operate in high-ambient locations — engine bay, on-motor drives, or near exhaust heat — where silicon diodes would need significant derating or active cooling.
The 1650 pF capacitance at 0 V, 1 MHz is the only charge-related parameter — it sets the switching energy per cycle, not a stored minority-carrier charge. The forward voltage drop is 1.5 V maximum at 20 A, 25 °C. Reverse leakage at 1200 V is 120 µA — a figure that increases with temperature, so the thermal design should budget for leakage power at the hot end of the operating range.
Package and footprint — D²PAK (TO-263AB)
The STPSC20H12GY-TR is supplied in a D²PAK (TO-263-3, 2 leads plus tab) surface-mount package.
It is ROHS3 compliant and part of the ECOPACK®2 series, meeting the current EU and global restriction-of-hazardous-substances requirements.