The STPSC20H12G2-TR is a silicon carbide Schottky diode from STMicroelectronics, rated for a maximum reverse voltage of 1200 V and an average rectified current of 20 A. The 1.5 V forward voltage drop at 20 A is typical for a 1200 V SiC Schottky of this die size; the 1650 pF junction capacitance at 0 V informs the snubber design for the layout engineer.
Junction temperature and thermal management
The D2PAK HV package exposes a large tab for thermal vias; the 175°C maximum junction allows derating headroom when the 20 A average current is run at elevated switching frequencies. The 120 µA reverse leakage at 1200 V and 25°C is typical for SiC — expect it to increase with temperature, so the bias resistor in the gate-drive supply should account for the hot leakage.
The part carries the ECOPACK2 rating, confirming RoHS compliance and no restricted substances per the current EU directive.