The STPSC20H12G-TR is a Silicon Carbide Schottky diode rated for 1200 V reverse voltage and 20 A average rectified current. That eliminates the switching loss spike that plagues ultrafast silicon diodes at high frequency, so the heatsink runs cooler and the MOSFET or IGBT sees less turn-on stress.
1200 V blocking, 20 A forward — sizing for PFC and inverter stages
With 1200 V DC reverse maximum and 20 A forward average, this diode fits continuous-conduction-mode PFC boost stages in 1–3 kW supplies, solar microinverters, and on-board EV chargers. The forward voltage drop is 1.5 V at 20 A — typical for a SiC Schottky of this die size — and the reverse leakage at rated voltage is 120 µA, which matters more at high junction temperature than at 25 °C.
175 °C junction — thermal budget for dense power layouts
That 175 °C ceiling gives real headroom in a cramped D²PAK footprint when the ambient inside the enclosure hits 85–105 °C. The 1650 pF capacitance at 0 V is typical for a 20 A SiC die — account for it in the gate-driver loop if you are switching above 100 kHz.
STMicroelectronics lists the STPSC20H12G-TR as Active.