1200 V SiC Schottky — no recovery tail to manage
The STPSC20H12DY is a silicon carbide Schottky diode rated for 1200 V reverse voltage and 20 A average forward current, packaged in a TO-220AC through-hole case.
AEC-Q101 and 175°C junction — built for the engine bay
This part carries AEC-Q101 automotive qualification and a 175°C maximum junction temperature. That combination makes it a candidate for on-board charger PFC stages, DC-DC converter.
Forward drop and capacitance — what the BOM needs to budget
Maximum forward voltage is 1.5 V at 20 A, 25°C. That 30 W conduction loss at full rated current sets the heatsink requirement — a TO-220AC bolted to a properly sized aluminium extrusion handles it, but the thermal interface matters. Junction-to-case thermal resistance is not listed here; the designer should pull the full thermal model from the datasheet. The 1650 pF junction capacitance at 0 V, 1 MHz is the charge the gate driver sees each switching cycle — a SiC Schottky's capacitive turn-on loss is lower than a silicon fast diode's reverse recovery loss, but it is not zero.
STMicroelectronics lists the STPSC20H12DY as Active.