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STMicroelectronics STPSC20H12D — Discrete Semiconductors

STMicroelectronics STPSC20H12D SiC Schottky, 1200 V, 20 A

MPNSTPSC20H12D
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STMicroelectronics STPSC20H12D, Silicon Carbide Schottky Diode, 1200 V DC Reverse, 20 A Average Rectified, Zero Reverse Recovery Time, TO-220AC Through-Hole, -40°C to 175°C Junction.

$11.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC20H12D specifications
ParameterValue
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 20 A
Current - reverse leakage @ vr120 µA @ 1200 V
Current - average rectified20A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,1650pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

Why zero trr matters in a 1200 V boost stage

The STPSC20H12D is a 1200 V, 20 A Silicon Carbide Schottky diode in a TO-220AC package.

1200 V blocking — the PFC and DC-link tier

The 1200 V reverse voltage rating puts this diode in the 800 V bus, three-phase PFC, and EV charger DC-link class. A 600 V SiC Schottky would need derating headroom that eats into the margin; at 1200 V you get a full 400 V safety band over a nominal 800 V rail, covering transients from grid surges and motor regeneration without avalanche stress. Forward voltage is 1.5 V maximum at 20 A.

20 A in a TO-220AC — thermal reality

20 A average rectified current through a TO-220AC package is achievable only with adequate heatsinking.

Frequently asked questions

What is the reverse recovery time of STPSC20H12D?

The reverse recovery time is 0 ns — it is a Silicon Carbide Schottky diode with no stored charge, so there is no recovery tail to measure.