STMicroelectronics STPSC20H065CTY, Automotive AEC-Q101 SiC Schottky diode, 650 V reverse voltage, 10 A per diode, common cathode pair, TO-220-3 through-hole, -40°C to 175°C junction.
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.75 V @ 10 A |
| Current - reverse leakage @ vr | 100 µA @ 650 V |
| Current - average rectified (Io) (per diode) | 10A |
| Operating temperature - junction | -40°C ~ 175°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Qualification | AEC-Q101 |
| Case | TO-220-3 |
| Diode configuration | 1 Pair Common Cathode |
AEC-Q101 qualification and a 175°C junction temperature make it suited for on-board charger, DC-DC converter, and traction inverter auxiliary supplies in hybrid and electric vehicles. The SiC Schottky structure delivers near-zero reverse recovery charge, which reduces switching losses and EMI in hard-switched topologies like continuous-conduction-mode PFC.
The part is Grade Automotive and qualified to AEC-Q101, making it suitable for automotive under-hood and chassis-domain applications.
SiC Schottky diodes have a positive temperature coefficient, so paralleling is practical — current sharing improves as the hotter diode increases in resistance. Ensure each diode has its own thermal path and the total current stays within the package's thermal rating.
The listed speed is Fast Recovery =< 500 ns, > 200 mA (Io). In practice, SiC Schottky diodes have negligible reverse recovery charge, so switching losses are dominated by junction capacitance rather than recovery time.