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STMicroelectronics STPSC20065W — Discrete Semiconductors

STPSC20065W SiC Schottky Diode, 20 A 650 V, DO-247

MPNSTPSC20065W
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STMicroelectronics STPSC20065W SiC (Silicon Carbide) Schottky diode, 20 A average rectified, 650 V reverse voltage, zero recovery time, DO-247-2 through-hole package, -40 to 175°C junction.

$6.1800Ref. price · indicative, final on quote
STMicroelectronics STPSC20065W datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC20065W specifications
ParameterValue
SeriesECOPACK®2
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 20 A
Current - reverse leakage @ vr300 µA @ 650 V
Current - average rectified20A
Operating temperature - junction-40°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
CaseDO-247-2 (Straight Leads)
Capacitance @ vr,1250pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

SiC Schottky — zero recovery, no trade-off

The STPSC20065W is a 650 V, 20 A silicon-carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series.

20 A average, 650 V blocking — sizing the power stage

Rated for 20 A average rectified current (Io) and 650 V DC reverse voltage (Vr). The forward drop maxes at 1.45 V at 20 A, so conduction loss at full load sits around 29 W — plan the heatsink accordingly. The DO-247 through-hole package handles the dissipation if you bolt it to a properly sized heatsink with good thermal interface.

175°C junction — margin for the hot end

That 175°C upper limit gives you headroom in a motor-drive cabinet or a sealed power supply where ambient can hit 85°C and the diode is the hottest component on the board. Reverse leakage is 300 µA at 650 V — a nonissue at rated voltage, but worth derating if you push the junction near the limit.

Frequently asked questions

What does 'No Recovery Time > 500mA (Io)' mean?

It means the diode exhibits zero reverse-recovery time (0 ns trr) when switching from a forward current greater than 500 mA. This is inherent to SiC Schottky technology — no stored charge, so no recovery tail. The practical benefit is dramatically lower switching losses and reduced EMI compared to a silicon ultrafast diode.