SiC Schottky diode for hard-switching power stages
Its zero stored charge means the reverse recovery time is 0 ns — no recovery tail, no switching loss, and minimal ringing in hard-switched topologies like PFC, boost converters, and traction inverters.
Automotive-grade qualification and package
The D²PAK (TO-263) surface-mount package with two leads and a tab allows the tab to be soldered to the PCB copper for thermal management, a standard footprint in automotive power modules.
Forward drop and leakage at rated current
At 20 A forward current the maximum forward voltage is 1.45 V. Reverse leakage at 600 V is 150 µA, typical for a 650 V SiC Schottky at high temperature. The junction capacitance measures 1250 pF at 0 V bias and 1 MHz, which influences switching losses at high frequency.