650 V, 20 A SiC Schottky — zero recovery losses
The STMicroelectronics STPSC20065DI is a 650 V, 20 A silicon carbide Schottky diode in a TO-220AC insulated package. The forward voltage drop is 1.45 V maximum at 20 A, typical for a 650 V SiC Schottky in this current class. Reverse leakage at 650 V is 300 µA — higher than a silicon fast-recovery diode at room temperature, but that leakage drops sharply with temperature derating and is a non-issue in most power stages.
Package and mounting — TO-220AC insulated
That saves assembly time and improves thermal contact. Capacitance is 1250 pF at zero bias, 1 MHz — relevant for estimating switching losses in the MHz-range converters this diode is intended for.
The device is part of the ECOPACK®2 series, meaning it meets ST's halogen-free and RoHS-compliant material declaration.