Skip to main content
STMicroelectronics STPSC20065D — Discrete Semiconductors

ST STPSC20065D SiC Schottky Diode, 650 V, 20 A, TO-220AC

MPNSTPSC20065D
Active

STMicroelectronics STPSC20065D, SiC Schottky diode, 650 V reverse voltage, 20 A average rectified current, zero reverse recovery (trr = 0 ns), TO-220AC through-hole package, -40 to 175 °C junction temperature, ECOPACK®2 series.

$6.4900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC20065D specifications
ParameterValue
SeriesECOPACK®2
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 20 A
Current - reverse leakage @ vr300 µA @ 650 V
Current - average rectified20A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,1250pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

Zero-recovery SiC Schottky for hard-switched power stages

The STPSC20065D is a 650 V, 20 A silicon carbide Schottky diode from STMicroelectronics, in a TO-220AC through-hole package. Its defining characteristic is zero reverse recovery time — trr is 0 ns, which means no charge-storage tail current when the diode commutates. In a continuous-conduction-mode PFC boost stage or a hard-switched inverter, that eliminates the reverse-recovery loss spike that costs efficiency and heats up the silicon FRED counterpart.

Parametric profile for a 1–3 kW PFC or DC-DC stage

Rated 650 V reverse with 20 A average forward current, the STPSC20065D covers the 1–3 kW PFC boost and DC-DC converter range where a single TO-220AC diode handles the boost or output rectifier slot. Forward voltage is 1.45 V maximum at 20 A and 25 °C junction — the on-state loss floor at full load. Junction temperature range is -40 to 175 °C, the standard SiC temperature grade that lets the diode share a heatsink with a 150 °C Tjmax MOSFET without being the thermal bottleneck. Capacitance is 1250 pF at 0 V bias, 1 MHz — this is the output capacitance the upstream switch sees during the voltage transition. In a 100 kHz PFC, the capacitive turn-on loss is negligible because the SiC Schottky has no stored charge; the 1250 pF figure is simply the junction capacitance that charges and discharges every cycle. Reverse leakage is 300 µA at 650 V and 25 °C — a low leakage floor that stays under 1 mA at 175 °C, which matters when the diode sits across a high-impedance bus in standby mode.

Through-hole TO-220AC — thermal and assembly fit

The TO-220AC package (TO-220-2 variant with the tab as the cathode) is a through-hole power package. The exposed metal tab is the back-side thermal pad — it must be soldered or clamped to a heatsink for any continuous load above a few amps. The 20 A rating assumes adequate heatsinking; in free air the thermal limit is well below 20 A. The through-hole leads fit a 0.100-inch pitch PCB pattern; no special soldering profile beyond standard leaded-wave or hand-solder. The ECOPACK®2 series designation means the part is RoHS-compliant and free of the restricted substances listed in the ST ECOPACK specification.

Active lifecycle — no LTB window to manage

ST lists the STPSC20065D product status as Active. The buyer can qualify this part into a production BOM without planning for a future LTB event.

Frequently asked questions

What is the reverse recovery time (trr) of STPSC20065D?

The reverse recovery time is 0 ns — the silicon carbide Schottky structure has no minority-carrier stored charge, so there is no reverse recovery tail. This is the key advantage over a fast-recovery epitaxial diode (FRED) in hard-switched topologies.

What package does the STPSC20065D come in?

It comes in a TO-220-2 through-hole package, specifically the TO-220AC variant where the exposed metal tab is the cathode connection. The leads are solderable to a standard 0.100-inch pitch PCB pattern.