Zero-recovery SiC Schottky — why it replaces silicon ultrafast diodes
The STPSC15H12WL is a silicon carbide Schottky diode rated for 1200 V reverse voltage and 15 A average rectified current. Its zero reverse recovery time eliminates the switching losses and ringing that plague silicon ultrafast rectifiers in hard-switched topologies.
1.5 V forward drop at 15 A — conduction loss and thermal budget
Forward voltage is 1.5 V maximum at 15 A.
1200 pF capacitance and 90 µA leakage at rated voltage
Output capacitance is 1200 pF at 0 V, 1 MHz — a low value for a 15 A SiC die, which keeps the capacitive switching loss modest. Reverse leakage is 90 µA at 1200 V, confirming the blocking capability holds at the rated voltage without thermal runaway risk.
Active lifecycle and DO-247 package fit
It ships in the DO-247 through-hole package with straight leads, a common footprint for high-power PFC and inverter stages.