Zero-reverse-recovery SiC Schottky for hard-switched power stages
The STMicroelectronics STPSC15H12DY is a 1200 V, 15 A Silicon Carbide Schottky diode in a TO-220-2 through-hole package.
1200 V blocking, 15 A average — derating headroom in a TO-220
Rated for 15 A average rectified current at a 1200 V DC reverse voltage, with a forward voltage drop of 1.5 V max at 15 A. The 1200pF capacitance at 0 V, 1 MHz is typical for a 15 A SiC die — the junction capacitance charges and discharges with negligible stored charge, so the switching energy is dominated by the output capacitance, not reverse recovery. The 90 µA reverse leakage at 1200 V is a room-temperature figure; SiC leakage rises with temperature, but stays well below silicon levels at the same junction temperature.
AEC-Q101 qualified — under-hood and chassis-domain ready
This part carries AEC-Q101 automotive qualification (series designation Automotive, AEC-Q101), covering the additional stress tests — high-temperature reverse bias, temperature cycling, and humidity — required for engine bay and transmission-mounted power electronics. The TO-220-2 package (supplier device package TO-220AC) is a standard through-hole footprint for heatsink-mounting in industrial and automotive power stages.
Lifecycle status is listed as Active. The base product number STPSC15 covers the 15 A SiC family across different package and qualification variants; the DY suffix specifically marks the AEC-Q101 TO-220-2 version.