SiC Schottky in a TO-220 — what the 650 V / 12 A rating buys you
The STPSC12H065DY is a Silicon Carbide Schottky diode rated for 650 V reverse voltage and 12 A average rectified current, housed in a TO-220AC through-hole package. The SiC technology gives it near-zero reverse recovery charge — the fast recovery spec (≤ 500 ns at > 200 mA) is conservative; in practice the switching losses are dominated by the junction capacitance, not stored charge.
Conduction loss and thermal budget
Forward voltage is 1.75 V max at 12 A and 25 °C junction — that is the worst-case conduction loss floor for a 12 A load. At 12 A the die dissipates about 21 W; the TO-220AC package with a proper heatsink keeps the junction below 175 °C, but the derating curve matters: above 100 °C the Vf rises and the thermal resistance of the mounting surface becomes the limit. The 600 pF capacitance at 0 V (1 MHz) is typical for a 12 A SiC die — it sets the switching loss at high frequency and the driver's peak current requirement.
Automotive grade and AEC-Q101 qualification
The ECOPACK®2 compliance covers the RoHS and halogen-free requirements for automotive supply chains.