650 V SiC Schottky — switching loss floor for PFC and inverter stages
The STPSC12H065CT is a Silicon Carbide Schottky diode from STMicroelectronics, rated 650 V reverse voltage and configured as a 1-pair common cathode in a TO-220-3 package. Each diode handles 6 A average rectified current, giving a total 12 A output for a PFC boost or inverter freewheeling leg. The 650 V blocking voltage provides a 1.6× derating margin over a 400 V DC bus, which is the standard for single-phase and three-phase PFC stages in industrial power supplies and motor drives.
The fast recovery spec (≤500 ns at >200 mA) is typical for SiC Schottky — there is no reverse recovery charge to sweep out, so switching losses are near-zero. This lets the designer push the switching frequency above 100 kHz without the thermal penalty a silicon ultrafast diode would incur. Forward voltage is 1.75 V maximum at 6 A per diode. At full load each diode dissipates about 10.5 W; the common-cathode pair totals 21 W. Reverse leakage is 60 µA at 650 V, which is negligible at room temperature but rises with junction temperature. Even at 175°C it stays well below the leakage of a comparable silicon fast-recovery diode, keeping standby losses low in lightly loaded conditions.
The base product number is STPSC12, which covers a family of 650 V SiC Schottky diodes in various current ratings and packages. The CT suffix denotes the common-cathode dual-diode configuration in TO-220.
Package and mounting — TO-220 through-hole for heatsink attachment
The TO-220-3 through-hole package (supplier device package TO-220) has a metal tab for bolting to a heatsink. The shipping medium is Tube, which is the standard for through-hole power devices in TO-220.