SiC Schottky for automotive power stages
The STPSC12C065DY is a silicon carbide Schottky diode rated for 650 V reverse voltage and 12 A average forward current, housed in a TO-220AC through-hole package.
650 V blocking and 175°C junction — the thermal headroom
The 650 V DC reverse rating provides margin on a 400 V nominal bus, covering load-dump and switching transients without avalanche derating. The junction temperature range extends to 175°C, which is the ceiling for the heatsink design — the TO-220AC tab must be thermally coupled to a heatsink sized for 12 A continuous conduction at the ambient under-hood temperature. Reverse leakage at 650 V is 120 µA — negligible at 25°C but rises with junction temperature; the thermal budget should account for leakage at the 175°C endpoint.
Switching speed and capacitive charge
The diode is rated Fast Recovery ≤500 ns at >200 mA, but as a SiC Schottky it is a majority-carrier device with no reverse recovery charge — the 500 ns figure is a classification label, not a switching limit. The real switching loss driver is the junction capacitance: 530 pF at 0 V, 1 MHz. In a hard-switched PFC at 100 kHz, the capacitive turn-on loss is the number to budget, not a recovery tail.