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STMicroelectronics STPSC12065G2Y-TR — Discrete Semiconductors

STPSC12065G2Y-TR SiC Schottky Diode, 650V 12A, AEC-Q101

MPNSTPSC12065G2Y-TR
Active

STMicroelectronics STPSC12065G2Y-TR, SiC Schottky diode, 650 V reverse, 12 A forward, zero trr, AEC-Q101, D2PAK HV, -40°C to 175°C junction.

$4.6400Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesECOPACK®2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC12065G2Y-TR specifications
ParameterValue
SeriesECOPACK®2
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 12 A
Current - reverse leakage @ vr150 µA @ 650 V
Current - average rectified12A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,750pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

650 V, 12 A, zero trr — the SiC Schottky that clears the switching loss budget

The STPSC12065G2Y-TR is a 650 V, 12 A SiC Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. It delivers zero reverse recovery time (trr = 0 ns), which eliminates the switching loss tail that plagues silicon ultrafast diodes.

Zero reverse recovery is the defining characteristic of SiC Schottky diodes. In a hard-switched boost converter or a totem-pole PFC stage, the diode's recovery charge is the dominant source of turn-on loss in the MOSFET. With trr = 0 ns, the STPSC12065G2Y-TR eliminates that loss component entirely, which lets the designer raise the switching frequency without a proportional efficiency penalty. The 750 pF capacitance at 0 V, 1 MHz is the capacitive charge that still needs to be supplied each cycle — that sets the practical upper frequency limit, not the recovery tail.

Automotive-grade qualification and thermal headroom

The 175°C Tj max gives headroom above the typical 150°C limit of silicon diodes, which matters when the diode is mounted on a hot heatsink in a sealed inverter enclosure.

The base product number STPSC12065 covers the die and package family; the G2Y suffix denotes the specific SiC generation and the D2PAK HV package variant.

Frequently asked questions

Is STPSC12065G2Y-TR AEC-Q101 qualified for automotive use?

Yes, it carries AEC-Q101 qualification and is graded Automotive, making it suitable for automotive power-train and chassis-domain applications.

Does STPSC12065G2Y-TR have zero reverse recovery time?

Yes, the reverse recovery time (trr) is 0 ns. This is inherent to the SiC Schottky barrier — there is no stored minority charge to sweep out, so the diode turns off instantly when the current reverses.