650 V, 12 A, zero trr — the SiC Schottky that clears the switching loss budget
The STPSC12065G2Y-TR is a 650 V, 12 A SiC Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. It delivers zero reverse recovery time (trr = 0 ns), which eliminates the switching loss tail that plagues silicon ultrafast diodes.
Zero reverse recovery is the defining characteristic of SiC Schottky diodes. In a hard-switched boost converter or a totem-pole PFC stage, the diode's recovery charge is the dominant source of turn-on loss in the MOSFET. With trr = 0 ns, the STPSC12065G2Y-TR eliminates that loss component entirely, which lets the designer raise the switching frequency without a proportional efficiency penalty. The 750 pF capacitance at 0 V, 1 MHz is the capacitive charge that still needs to be supplied each cycle — that sets the practical upper frequency limit, not the recovery tail.
Automotive-grade qualification and thermal headroom
The 175°C Tj max gives headroom above the typical 150°C limit of silicon diodes, which matters when the diode is mounted on a hot heatsink in a sealed inverter enclosure.
The base product number STPSC12065 covers the die and package family; the G2Y suffix denotes the specific SiC generation and the D2PAK HV package variant.
